Technical parameters/number of channels: 1
Technical parameters/number of pins: 7
Technical parameters/drain source resistance: 0.0019 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 315 W
Technical parameters/threshold voltage: 3.5 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/Continuous drain current (Ids): 180A
Technical parameters/rise time: 108 ns
Technical parameters/Input capacitance (Ciss): 12800pF @25V(Vds)
Technical parameters/descent time: 40 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 315W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 7
Encapsulation parameters/Encapsulation: TO-263-7
External dimensions/length: 15.25 mm
External dimensions/width: 10.4 mm
External dimensions/height: 4.8 mm
External dimensions/packaging: TO-263-7
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: medical
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP310N10F7
|
ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 STripFET™ H7 系列，STMicroelectronics STripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管，STMicroelectronics
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review