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Model STGW15H120F2
Description IGBT Transistor Trench gate field stop IGBT, H series 1200 V, 15 A high speed
Product QR code
Brand: ST Microelectronics
Packaging TO-247-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
47.52  yuan 47.52yuan
1+:
$ 57.9744
10+:
$ 54.6480
100+:
$ 52.1770
250+:
$ 51.7968
500+:
$ 51.4166
1000+:
$ 50.9890
2500+:
$ 50.6088
5000+:
$ 50.3712
Quantity
1+
10+
100+
250+
500+
Price
$57.9744
$54.6480
$52.1770
$51.7968
$51.4166
Price $ 57.9744 $ 54.6480 $ 52.1770 $ 51.7968 $ 51.4166
Start batch production 1+ 10+ 100+ 250+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3346) Minimum order quantity(1)
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Technical parameters/dissipated power: 259 W

Technical parameters/breakdown voltage (collector emitter): 1200 V

Technical parameters/rated power (Max): 259 W

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 259000 mW

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-247-3

External dimensions/packaging: TO-247-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs information/ECCN code: EAR99

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