Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 80W (Tc)
Technical parameters/input capacitance: 3.40 nF
Technical parameters/gate charge: 80.0 nC
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/Continuous drain current (Ids): 9.30 A
Technical parameters/Input capacitance (Ciss): 3400pF @25V(Vds)
Technical parameters/rated power (Max): 80 W
Technical parameters/dissipated power (Max): 80W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: ISOWATT-218-3
External dimensions/packaging: ISOWATT-218-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP60NF06
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP60NF06 晶体管, MOSFET, N沟道, 60 A, 60 V, 16 mohm, 10 V, 2 V
|
||
STW20NK50Z
|
ST Microelectronics | 功能相似 | TO-247-3 |
N 通道 MDmesh™ SuperMESH™,250V 至 650V,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
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