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Model STGF30V60DF
Description IGBT STMicroelectronics IGBT discrete components and modules, STMicroelectronics insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.
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Brand: ST Microelectronics
Packaging TO-220
Delivery time
Packaging method
Standard packaging quantity 1
9.67  yuan 9.67yuan
10+:
$ 11.5980
100+:
$ 11.0181
500+:
$ 10.6315
1000+:
$ 10.6122
2000+:
$ 10.5349
5000+:
$ 10.4382
7500+:
$ 10.3609
10000+:
$ 10.3222
Quantity
10+
100+
500+
1000+
2000+
Price
$11.5980
$11.0181
$10.6315
$10.6122
$10.5349
Price $ 11.5980 $ 11.0181 $ 10.6315 $ 10.6122 $ 10.5349
Start batch production 10+ 100+ 500+ 1000+ 2000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9226) Minimum order quantity(10)
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Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 260 W

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220

External dimensions/length: 10.4 mm

External dimensions/width: 4.6 mm

External dimensions/height: 15.75 mm

External dimensions/packaging: TO-220

Other/Product Lifecycle: Unknown

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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