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Model STGB18N40LZ-1
Description EAS 180Millijoules -390 V - Internally clamped IGBT EAS 180 mJ -390 V - Internally clamped IGBT
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Brand: ST Microelectronics
Packaging TO-262-3
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Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8144) Minimum order quantity(1)
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Technical parameters/breakdown voltage (collector emitter): 420 V

Technical parameters/rated power (Max): 150 W

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 150000 mW

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-262-3

External dimensions/length: 10.4 mm

External dimensions/width: 4.6 mm

External dimensions/height: 9.35 mm

External dimensions/packaging: TO-262-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Not Recommended for New Designs

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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