Technical parameters/number of channels: 1
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 30W (Tc)
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 20A
Technical parameters/rise time: 25 ns
Technical parameters/Input capacitance (Ciss): 1800pF @50V(Vds)
Technical parameters/descent time: 50 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 30W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STF26NM60N
|
ST Microelectronics | 类似代替 | TO-220-3 |
N 通道 MDmesh™,600V/650V,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics
|
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