Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.15 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 35 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 19.5A
Technical parameters/rise time: 19 ns
Technical parameters/Input capacitance (Ciss): 2050pF @50V(Vds)
Technical parameters/rated power (Max): 35 W
Technical parameters/descent time: 42 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 35W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/width: 4.6 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Industrial, Power Management, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STF25NM60ND
|
ST Microelectronics | 类似代替 | TO-220-3 |
STMICROELECTRONICS STF25NM60ND 功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.13 ohm, 10 V, 4 V
|
||
STF28N60DM2
|
ST Microelectronics | 类似代替 | TO-220-3 |
STMICROELECTRONICS STF28N60DM2 Power MOSFET, Mdmesh DM2, N Channel, 21 A, 600 V, 0.13 ohm, 10 V, 4 V 新
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review