Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 20.0 A
Technical parameters/drain source resistance: 70.0 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 60 W
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60.0 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 20.0 A
Technical parameters/rise time: 15 ns
Technical parameters/Input capacitance (Ciss): 400pF @25V(Vds)
Technical parameters/rated power (Max): 28 W
Technical parameters/descent time: 5 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 28W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.4 mm
External dimensions/width: 4.6 mm
External dimensions/height: 9.3 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STF20NF06L
|
ST Microelectronics | 类似代替 | TO-220-3 |
N沟道60V - 0.06ヘ - 20A - D2PAK / TO- 220 / TO- 220FP STripFET⑩ II功率MOSFET N-channel 60V - 0.06ヘ - 20A - D2PAK/TO-220/TO-220FP STripFET⑩ II Power MOSFET
|
||
STF40NF06
|
ST Microelectronics | 类似代替 | TO-220-3 |
N沟道60V - 0.024ohm - 23A - TO- 220FP的STripFET II MOSFET N-CHANNEL 60V - 0.024ohm - 23A - TO-220FP STripFET II MOSFET
|
||
STP36NF06FP
|
ST Microelectronics | 类似代替 | TO-220-3 |
STMICROELECTRONICS STP36NF06FP 晶体管, MOSFET, N沟道, 18 A, 60 V, 40 mohm, 10 V, 4 V
|
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