Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.275 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 40 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 950 V
Technical parameters/Continuous drain current (Ids): 17.5A
Technical parameters/rise time: 12 ns
Technical parameters/forward voltage (Max): 1.5 V
Technical parameters/Input capacitance (Ciss): 1500pF @100V(Vds)
Technical parameters/rated power (Max): 40 W
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 40W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STF10NM60N
|
ST Microelectronics | 类似代替 | TO-220-3 |
STMICROELECTRONICS STF10NM60N 功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.53 ohm, 10 V, 3 V
|
||
STF6N95K5
|
ST Microelectronics | 类似代替 | TO-220-3 |
N沟道950 V， 1 I © （典型值） ， 9齐纳保护SuperMESHâ ??在DPAK ¢ 5功率MOSFET ， TO- 220FP ， TO- 220 ， TO- 247和IPAK N-channel 950 V, 1 Ω typ., 9 A Zener-protected SuperMESH⢠5 Power MOSFET in DPAK, TO-220FP, TO-220, TO-247 and IPAK
|
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