Technical parameters/dissipated power: 25000 mW
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/rise time: 15 ns
Technical parameters/Input capacitance (Ciss): 850pF @50V(Vds)
Technical parameters/rated power (Max): 25 W
Technical parameters/descent time: 17 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 25W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STF10NM60N
|
ST Microelectronics | 类似代替 | TO-220-3 |
STMICROELECTRONICS STF10NM60N 功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.53 ohm, 10 V, 3 V
|
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