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Model STE45NK80ZD
Description NChannel 800V -0.11ohm-45- ISOTOP Super FREDMesh MOSFET N-CHANNEL 800V -0.11ohm-45 A ISOTOP Super FREDMesh MOSFET
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Brand: ST Microelectronics
Packaging ISOTOP-4
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Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5498) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 800 V

Technical parameters/rated current: 45.0 A

Technical parameters/drain source resistance: 130 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 600W (Tc)

Technical parameters/input capacitance: 26.0 nF

Technical parameters/gate charge: 781 nC

Technical parameters/drain source voltage (Vds): 800 V

Technical parameters/leakage source breakdown voltage: 800 V

Technical parameters/breakdown voltage of gate source: ±30.0 V

Technical parameters/Continuous drain current (Ids): 45.0 A

Technical parameters/rise time: 128 ns

Technical parameters/Input capacitance (Ciss): 26000pF @25V(Vds)

Technical parameters/rated power (Max): 600 W

Technical parameters/dissipated power (Max): 600W (Tc)

Encapsulation parameters/installation method: Screw

Encapsulation parameters/Encapsulation: ISOTOP-4

External dimensions/packaging: ISOTOP-4

Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IXFN44N80 IXFN44N80 IXYS Semiconductor 功能相似 SOT-227-4
IXYS SEMICONDUCTOR IXFN44N80 功率场效应管, MOSFET, N沟道, 44 A, 800 V, 165 mohm, 10 V, 4.5 V
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