Technical parameters/rated voltage (DC): 250 V
Technical parameters/rated current: 4.00 A
Technical parameters/drain source resistance: 900 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 50 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 250 V
Technical parameters/leakage source breakdown voltage: 250 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 4.00 A
Technical parameters/rise time: 18 ns
Technical parameters/Input capacitance (Ciss): 355pF @25V(Vds)
Technical parameters/descent time: 10.5 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 50W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.6 mm
External dimensions/width: 6.2 mm
External dimensions/height: 2.4 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STD4NS25
|
ST Microelectronics | 功能相似 | TO-252 |
N沟道250V - 0.9ohm - 4A DPAK / IPAK MESH OVERLAY⑩ MOSFET N-CHANNEL 250V - 0.9ohm - 4A DPAK/IPAK MESH OVERLAY⑩ MOSFET
|
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