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Model STD22NM20NT4
Description NMDmesh with channel 200V -0.088 Ω -22A DPAK ultra-low gate charge ™ II MOSFET N-CHANNEL 200V - 0.088Ω - 22A DPAK ULTRA LOW GATE CHARGE MDmesh ™ II MOSFET
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Brand: ST Microelectronics
Packaging TO-252-3
Delivery time
Packaging method Cut Tape (CT)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7365) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 200 V

Technical parameters/rated current: 22.0 A

Technical parameters/drain source resistance: 105 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 100W (Tc)

Technical parameters/drain source voltage (Vds): 200 V

Technical parameters/leakage source breakdown voltage: 200 V

Technical parameters/Continuous drain current (Ids): 22.0 A

Technical parameters/rise time: 15 ns

Technical parameters/Input capacitance (Ciss): 800pF @25V(Vds)

Technical parameters/rated power (Max): 100 W

Technical parameters/descent time: 11 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -65 ℃

Technical parameters/dissipated power (Max): 100W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/packaging: TO-252-3

Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Cut Tape (CT)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

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