Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.198 Ω
Technical parameters/dissipated power: 110 W
Technical parameters/threshold voltage: 4 V
Technical parameters/input capacitance: 1240 pF
Technical parameters/drain source voltage (Vds): 650 V
Technical parameters/rise time: 7 ns
Technical parameters/Input capacitance (Ciss): 1240pF @100V(Vds)
Technical parameters/rated power (Max): 110 W
Technical parameters/descent time: 9 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 110W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.6 mm
External dimensions/width: 6.2 mm
External dimensions/height: 2.4 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STD18N65M5
|
ST Microelectronics | 功能相似 | TO-252-3 |
N 通道 MDmesh™ M5 系列，STMicroelectronics MDmesh M5 功率 MOSFET 优化用于高功率 PFC 和 PWM 拓扑。 主要特征包括每硅面积的低通态损耗硅片面积与低栅极电荷。 它们设计用于节能、紧凑型且可靠的硬切换应用，例如太阳能转换器、消费产品电源和电子照明控制。 ### MOSFET 晶体管，STMicroelectronics
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review