Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 120 V
Technical parameters/Continuous drain current (Ids): 6A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SIP
External dimensions/packaging: SIP
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube, Rail
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUK101-50GL
|
NXP | 功能相似 | TO-220-3 |
功率MOS晶体管逻辑电平TOPFET PowerMOS transistor Logic level TOPFET
|
||
BUK118-50DL,127
|
NXP | 功能相似 | TO-220-3 |
SOT-78B N-CH 50V 16A
|
||
STA50813TR
|
ST Microelectronics | 功能相似 | PowerSO-36 |
音频放大器 40V 4.5A Quad Power
|
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