Technical parameters/rated voltage (DC): 55.0 V
Technical parameters/rated current: 80.0 A
Technical parameters/dissipated power: 300W (Tc)
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/Continuous drain current (Ids): 80.0 A
Technical parameters/rise time: 85.0 ns
Technical parameters/Input capacitance (Ciss): 3850pF @25V(Vds)
Technical parameters/dissipated power (Max): 300W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-262-3
External dimensions/packaging: TO-262-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STU60N55F3
|
ST Microelectronics | 功能相似 | TO-251-3 |
N沟道55V - 6.5mohm - 80A - DPAK - IPAK - D2PAK - TO- 220 / FP的STripFET TM功率MOSFET N-channel 55V - 6.5mohm - 80A - DPAK - IPAK - D2PAK - TO-220/FP STripFET TM Power MOSFET
|
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