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Model STB50NE10T4
Description NChannel 100V -0.021 ヘ -50A - D2PAK STripFET ⑩ Power MOSFET N-channel 100V -0.021 ヘ -50A - D2PAK STripFET ⑩ Power MOSFET
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Brand: ST Microelectronics
Packaging TO-263-3
Delivery time
Packaging method Tape
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1969) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 100 V

Technical parameters/rated current: 50.0 A

Technical parameters/drain source resistance: 21.0 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 180W (Tc)

Technical parameters/drain source voltage (Vds): 100 V

Technical parameters/leakage source breakdown voltage: 100 V

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 50.0 A

Technical parameters/Input capacitance (Ciss): 6000pF @25V(Vds)

Technical parameters/dissipated power (Max): 180W (Tc)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/packaging: TO-263-3

Physical parameters/operating temperature: -65℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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