Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 2.2 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 45 W
Technical parameters/threshold voltage: 3.75 V
Technical parameters/drain source voltage (Vds): 620 V
Technical parameters/rise time: 6.8 ns
Technical parameters/Input capacitance (Ciss): 385pF @25V(Vds)
Technical parameters/rated power (Max): 45 W
Technical parameters/descent time: 15.6 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 45W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.75 mm
External dimensions/width: 10.4 mm
External dimensions/height: 4.6 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP3N62K3
|
ST Microelectronics | 完全替代 | TO-220-3 |
N 通道 MDmesh™ K3 系列，SuperMESH3™, STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
|
||
STU3N62K3
|
ST Microelectronics | 完全替代 | TO-251-3 |
STMICROELECTRONICS STU3N62K3 功率场效应管, MOSFET, N沟道, 2.7 A, 620 V, 2.2 ohm, 10 V, 3.75 V
|
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