Technical parameters/drain source resistance: 0.0014 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 300 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 24 V
Technical parameters/Continuous drain current (Ids): 80.0 A
Technical parameters/rise time: 275 ns
Technical parameters/Input capacitance (Ciss): 7055pF @15V(Vds)
Technical parameters/rated power (Max): 300 W
Technical parameters/descent time: 94.4 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.4 mm
External dimensions/width: 9.35 mm
External dimensions/height: 4.6 mm
External dimensions/packaging: TO-263-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF1324SPBF
|
International Rectifier | 功能相似 | TO-263-3 |
Trans MOSFET N-CH 24V 340A 3Pin(2+Tab) D2PAK
|
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