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Model STB141NF55-1
Description NSTripFET with channel 55V -0.0065 Ω -80A - D2PAK - I2PAK - TO -220 ™ II Power MOSFET N-channel 55V -0.0065 Ω -80A - D2PAK - I2PAK - TO-220 STripFET ™ II Power MOSFET
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Brand: ST Microelectronics
Packaging TO-262-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9420) Minimum order quantity(1)
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Technical parameters/polarity: N-CH

Technical parameters/dissipated power: 300W (Tc)

Technical parameters/drain source voltage (Vds): 55 V

Technical parameters/Continuous drain current (Ids): 80A

Technical parameters/Input capacitance (Ciss): 5300pF @25V(Vds)

Technical parameters/dissipated power (Max): 300W (Tc)

Encapsulation parameters/installation method: Through Hole

Encapsulation parameters/Encapsulation: TO-262-3

External dimensions/packaging: TO-262-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
STP141NF55 STP141NF55 ST Microelectronics 功能相似 TO-220-3
N沟道55V - 0.0065Ω - 80A - D2PAK - I2PAK - TO- 220的STripFET ™II功率MOSFET N-channel 55V - 0.0065Ω - 80A - D2PAK - I2PAK - TO-220 STripFET™ II Power MOSFET
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