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Model STB20NM50T4
Description NMDmesh power MOSFET with channel 500V -0.20ohm -20A TO-220/FP/D2PAK/I2PAK? N-CHANNEL 500V - 0.20ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh? Power MOSFET
Product QR code
Brand: ST Microelectronics
Packaging TO-263-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
25.28  yuan 25.28yuan
5+:
$ 29.5718
50+:
$ 28.3080
200+:
$ 27.6003
500+:
$ 27.4234
1000+:
$ 27.2465
2500+:
$ 27.0443
5000+:
$ 26.9179
7500+:
$ 26.7915
Quantity
5+
50+
200+
500+
1000+
Price
$29.5718
$28.3080
$27.6003
$27.4234
$27.2465
Price $ 29.5718 $ 28.3080 $ 27.6003 $ 27.4234 $ 27.2465
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7169) Minimum order quantity(5)
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Technical parameters/rated voltage (DC): 550 V

Technical parameters/rated current: 20.0 A

Technical parameters/number of channels: 1

Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 0.2 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 192 W

Technical parameters/threshold voltage: 4 V

Technical parameters/input capacitance: 1.48 nF

Technical parameters/gate charge: 56.0 nC

Technical parameters/drain source voltage (Vds): 550 V

Technical parameters/leakage source breakdown voltage: 500 V

Technical parameters/breakdown voltage of gate source: ±30.0 V

Technical parameters/Continuous drain current (Ids): 20.0 A

Technical parameters/rise time: 16 ns

Technical parameters/Input capacitance (Ciss): 1480pF @25V(Vds)

Technical parameters/rated power (Max): 192 W

Technical parameters/descent time: 8.5 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -65 ℃

Technical parameters/dissipated power (Max): 192W (Tc)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/length: 10.4 mm

External dimensions/width: 9.35 mm

External dimensions/height: 4.6 mm

External dimensions/packaging: TO-263-3

Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
STB20NM50 STB20NM50 ST Microelectronics 功能相似 D2PAK
N沟道500V - 0.20ohm - 20A TO- 220 / FP / D2PAK / I2PAK的MDmesh功率MOSFET N-CHANNEL 500V - 0.20ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET
PDF
STB20NM50FD STB20NM50FD ST Microelectronics 功能相似 D2PAK
N沟道500V - 0.20ohm - 20A D2PAK FDmesh⑩Power MOSFET，具有快速二极管 N-CHANNEL 500V - 0.20ohm - 20A D2PAK FDmesh⑩Power MOSFET With FAST DIODE
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