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Model STB15NM60N
Description NChannel 600V -0.270 ヘ -14A-D2/I2PAK - TO -220/FP - TO -247 Second generation MDmesh ⑩ Power MOSFET N-channel 600V -0.270 ヘ -14A-D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh ⑩ Power MOSFET
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Brand: ST Microelectronics
Packaging TO-263-3
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Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2197) Minimum order quantity(1)
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Technical parameters/dissipated power: 125 W

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/rise time: 14 ns

Technical parameters/Input capacitance (Ciss): 1250pF @50V(Vds)

Technical parameters/descent time: 30 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 125W (Tc)

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/length: 10.4 mm

External dimensions/width: 9.35 mm

External dimensions/height: 4.6 mm

External dimensions/packaging: TO-263-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
STB15NM60ND STB15NM60ND ST Microelectronics 类似代替 TO-263-3
N 通道 FDmesh™ 功率 MOSFET，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
PDF
STI15NM60N STI15NM60N ST Microelectronics 类似代替 TO-262-3
N沟道600V - 0.270ヘ - 14A - D2 / I2PAK - TO- 220 / FP - TO- 247第二代MDmesh⑩功率MOSFET N-channel 600V - 0.270ヘ - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET
PDF

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