Technical parameters/rated voltage (DC): 600 V
Technical parameters/rated current: 11.0 A
Technical parameters/drain source resistance: 450 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 160 W
Technical parameters/input capacitance: 1.00 nF
Technical parameters/gate charge: 30.0 nC
Technical parameters/drain source voltage (Vds): 650 V
Technical parameters/leakage source breakdown voltage: 600 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): 11.0 A
Technical parameters/rise time: 20 ns
Technical parameters/Input capacitance (Ciss): 1000pF @25V(Vds)
Technical parameters/rated power (Max): 160 W
Technical parameters/descent time: 11 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 160W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-262-3
External dimensions/length: 10 mm
External dimensions/width: 4.4 mm
External dimensions/height: 8.95 mm
External dimensions/packaging: TO-262-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STI13NM60N
|
ST Microelectronics | 类似代替 | TO-262-3 |
STMICROELECTRONICS STI13NM60N 功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.28 ohm, 10 V, 3 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review