Technical parameters/rated voltage (DC): -150 V
Technical parameters/rated current: -200 mA
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 200 mW
Technical parameters/breakdown voltage (collector emitter): 150 V
Technical parameters/maximum allowable collector current: 0.2A
Technical parameters/minimum current amplification factor (hFE): 60 @10mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 240
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/length: 2.2 mm
External dimensions/width: 1.35 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-323-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Cut Tape (CT), Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMST5401
|
Micro Commercial Components | 功能相似 |
Sot-323 Plastic-encapsulate Biploar Transistors
|
|||
MMST5401-7-F
|
Diodes Zetex | 完全替代 | SOT-323 |
MMST5401 系列 PNP 150 V 200 mW 小信号 晶体管 表面贴装 - SOT-323-3
|
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