Technical parameters/frequency: 500 MHz
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 200 mW
Technical parameters/breakdown voltage (collector emitter): 15 V
Technical parameters/maximum allowable collector current: 0.2A
Technical parameters/minimum current amplification factor (hFE): 40 @10mA, 1V
Technical parameters/Maximum current amplification factor (hFE): 40 @10mA, 1V
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/packaging: SOT-323-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Nexperia | 功能相似 | 3 |
Trans GP BJT NPN 15V 0.2A 200mW 3Pin SC-70
|
||
PMST2369
|
Philips | 功能相似 | SOT-323 |
Trans GP BJT NPN 15V 0.2A 200mW 3Pin SC-70
|
||
PMST2369
|
NXP | 功能相似 | SOT-323 |
Trans GP BJT NPN 15V 0.2A 200mW 3Pin SC-70
|
||
PMST2369,135
|
Nexperia | 完全替代 | SOT-323-3 |
SC-70 NPN 15V 0.2A
|
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