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Model SST39SF020A-70-4I-WHE
Description SST39SF010A/020A/040 Parallel SuperFlash ® Microchip's SST39SF010A/020A/040 series devices are parallel multi-purpose SuperFlash devices ® Storage integrated circuit. ###Features 4.5-5.5V read and write operation lifespan -100000 cycles (typical) low power consumption - active current 10 mA, standby current 30 μ A (typical value at 14 MHz) sector erase capability - uniform 4K sector read access time -55 to 70 ns sector erase time 18 ms chip erase time: 70 ms (typical) byte programming time -14 μ s (typical) chip rewrite time - SST39SF010A 2 seconds, SST39SF020A 4 seconds, SST39SF040 8 seconds (typical value) latch address and data automatic write timing - internal VPP generation write end detection - trigger bit - data # polling TTL input/output compatibility JEDEC standard - flash EEPROM pin output and command kit # # # Flash memory, Microchip
Product QR code
Brand: Microchip
Packaging TSOP-32
Delivery time
Packaging method Tray
Standard packaging quantity 1
13.08  yuan 13.08yuan
5+:
$ 15.3048
50+:
$ 14.6507
200+:
$ 14.2845
500+:
$ 14.1929
1000+:
$ 14.1013
2500+:
$ 13.9967
5000+:
$ 13.9313
7500+:
$ 13.8659
Quantity
5+
50+
200+
500+
1000+
Price
$15.3048
$14.6507
$14.2845
$14.1929
$14.1013
Price $ 15.3048 $ 14.6507 $ 14.2845 $ 14.1929 $ 14.1013
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7607) Minimum order quantity(5)
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Technical parameters/power supply voltage (DC): 4.50V (min)

Technical parameters/working voltage: 4.5V ~ 5.5V

Technical parameters/power supply current: 25 mA

Technical parameters/number of pins: 32

Technical parameters/digits: 8

Technical parameters/access time: 70 ns

Technical parameters/memory capacity: 250000 B

Technical parameters/access time (Max): 70 ns

Technical parameters/operating temperature (Max): 85 ℃

Technical parameters/operating temperature (Min): -40 ℃

Technical parameters/power supply voltage: 4.5V ~ 5.5V

Technical parameters/power supply voltage (Max): 5.5 V

Technical parameters/power supply voltage (Min): 4.5 V

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 32

Encapsulation parameters/Encapsulation: TSOP-32

External dimensions/length: 12.5 mm

External dimensions/width: 8.1 mm

External dimensions/height: 1.05 mm

External dimensions/packaging: TSOP-32

Physical parameters/operating temperature: -40℃ ~ 85℃

Other/Product Lifecycle: Active

Other/Packaging Methods: Tray

Other/Manufacturing Applications: Computers and Computer Peripherals, Communication and Networking, Consumer Electronics, Consumer Electronics, Industrial, Communications&Networking

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standards/REACH SVHC standards: No SVHC

Compliant with standard/REACH SVHC version: 2015/12/17

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SST39SF020A-70-4C-WH SST39SF020A-70-4C-WH Silicon Storage Tech 功能相似 TSOP
Flash, 256KX8, 70ns, PDSO32, 8 X 14MM, MO-142BA, TSOP1-32
PDF
SST39SF020A-70-4C-WHE SST39SF020A-70-4C-WHE Silicon Storage Tech 类似代替 TSOP
SST39SF010A/020A/040 并行 SuperFlash® 存储器 Microchip 的 SST39SF010A/020A/040 系列设备为并行多用途 SuperFlash® 存储集成电路。 ### 特点 4.5-5.5V 读写操作 寿命 - 100,000 次循环（典型） 低功耗 - 有源电流 10 mA，待机电流 30 μA（14 MHz 时的典型值） 扇区擦除能力 - 均匀 4 K 扇区 读取访问时间 - 55 至 70 ns 扇区擦除时间 18 ms 芯片擦除时间：70 ms（典型） 字节编程时间 - 14 μs（典型） 芯片重写时间 – SST39SF010A 2 秒、SST39SF020A 4 秒、SST39SF040 8 秒（典型值） 锁存地址和数据 自动写入计时 - 内部 VPP 生成 写入结束检测 - 触发位 - 数据# 轮询 TTL 输入/输出兼容性 JEDEC 标准 - 闪存 EEPROM 引脚输出和命令套件 ### 闪存，Microchip
PDF
SST39SF020A-70-4I-WH SST39SF020A-70-4I-WH Silicon Storage Tech 功能相似 TSOP
Flash, 256KX8, 70ns, PDSO32, 8 X 14MM, MO-142BA, TSOP1-32
PDF

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