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Model 2SC3332T-AA
Description NPN Transistors, such as ON Semiconductor bipolar transistors, can amplify analog or digital signals. They can also switch DC or be used as oscillators. ###Standard Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard. ### Bipolar transistors, various bipolar transistors from On Semiconductor, including the following categories: small signal transistors, general-purpose transistors, dual NPN and PNP transistors, power transistors, high-voltage transistors, RF bipolar transistors, low-noise, dual matched, and complex bipolar transistors
Product QR code
Brand: ON Semiconductor
Packaging TO-226-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.16  yuan 1.16yuan
5+:
$ 1.5701
25+:
$ 1.4538
50+:
$ 1.3723
100+:
$ 1.3375
500+:
$ 1.3142
2500+:
$ 1.2851
5000+:
$ 1.2735
10000+:
$ 1.2560
Quantity
5+
25+
50+
100+
500+
Price
$1.5701
$1.4538
$1.3723
$1.3375
$1.3142
Price $ 1.5701 $ 1.4538 $ 1.3723 $ 1.3375 $ 1.3142
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9304) Minimum order quantity(5)
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Technical parameters/frequency: 120 MHz

Technical parameters/polarity: N-Channel, NPN

Technical parameters/dissipated power: 700 mW

Technical parameters/gain bandwidth product: 120 MHz

Technical parameters/breakdown voltage (collector emitter): 160 V

Technical parameters/maximum allowable collector current: 0.7A

Technical parameters/minimum current amplification factor (hFE): 100 @100mA, 5V

Technical parameters/Maximum current amplification factor (hFE): 400

Technical parameters/rated power (Max): 700 mW

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 700 mW

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-226-3

External dimensions/length: 5 mm

External dimensions/width: 4 mm

External dimensions/height: 5 mm

External dimensions/packaging: TO-226-3

Physical parameters/materials: Silicon

Physical parameters/operating temperature: 150℃ (TJ)

Other/Product Lifecycle: Active

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Customs Information/Hong Kong Import and Export License: NLR

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
2SC3332T-AA 2SC3332T-AA ON Semiconductor 功能相似 TO-226-3
Small Signal Bipolar Transistor
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