Technical parameters/dissipated power: 0.1 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Input capacitance (Ciss): 13.5pF @3V(Vds)
Technical parameters/rated power (Max): 100 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 100mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-416
External dimensions/height: 0.7 mm
External dimensions/packaging: SOT-416
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SSM3K15FS,LF
|
Toshiba | 类似代替 | SOT-416 |
Mosfet n-Ch Sgl 30V 0.1A Ssm
|
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