Technical parameters/rated current: 1.00 A
Technical parameters/forward voltage: 1.3 V
Technical parameters/thermal resistance: 45K/W (RθJA)
Technical parameters/reverse recovery time: 75 ns
Technical parameters/forward current: 1 A
Technical parameters/Maximum forward surge current (Ifsm): 30 A
Technical parameters/forward voltage (Max): 2.5 V
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/working junction temperature (Max): 175 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: SOD-57
External dimensions/length: 4 mm
External dimensions/packaging: SOD-57
Physical parameters/operating temperature: -55℃ ~ 175℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Aerospace, Defence, Military, Automotive, Defense, Military and Aerospace, Power Management, Power Management, Automotive
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/military grade: Yes
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N4007-T
|
Diodes | 功能相似 | DO-41 |
1N4007-T 编带
|
||
|
|
Rectron | 功能相似 | DO-41 |
1N4007-T 编带
|
||
1N4007RLG
|
ON Semiconductor | 功能相似 | DO-41 |
ON SEMICONDUCTOR 1N4007RLG 标准功率二极管, 单, 1 kV, 1 A, 450 mV, 30 A
|
||
BYV26E-TAP
|
Vishay Intertechnology | 类似代替 | SOD-57 |
VISHAY BYV26E-TAP 快速/超快二极管, AEC-Q101, 单, 1 kV, 1 A, 2.5 V, 75 ns, 30 A
|
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