Technical parameters/number of pins: 3
Technical parameters/dissipated power: 1 W
Technical parameters/minimum current amplification factor (hFE): 40
Technical parameters/DC current gain (hFE): 120
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92
External dimensions/length: 4.58 mm
External dimensions/width: 3.86 mm
External dimensions/height: 4.58 mm
External dimensions/packaging: TO-92
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Micro Commercial Components | 功能相似 | TO-92 |
NPN Epitaxial Silicon Transistor, 3 LD, TO92, MOLDED 0.200 IN LINE SPACING LD FORM, 2000/AMMO
|
||
SS8050CBU
|
Fairchild | 完全替代 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR SS8050CBU 单晶体管 双极, NPN, 25 V, 100 MHz, 1 W, 1.5 A, 120 hFE
|
||
SS8050CBU
|
ON Semiconductor | 完全替代 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR SS8050CBU 单晶体管 双极, NPN, 25 V, 100 MHz, 1 W, 1.5 A, 120 hFE
|
||
SS8050CBU
|
Freescale | 完全替代 |
FAIRCHILD SEMICONDUCTOR SS8050CBU 单晶体管 双极, NPN, 25 V, 100 MHz, 1 W, 1.5 A, 120 hFE
|
|||
|
SS8050CBU
|
FC | 完全替代 |
FAIRCHILD SEMICONDUCTOR SS8050CBU 单晶体管 双极, NPN, 25 V, 100 MHz, 1 W, 1.5 A, 120 hFE
|
|||
SS8050CTA
|
ON Semiconductor | 功能相似 | TO-92 |
FAIRCHILD SEMICONDUCTOR SS8050CTA 单晶体管 双极, NPN, 25 V, 100 MHz, 1 W, 1.5 A, 120 hFE
|
||
SS8050CTA
|
Fairchild | 功能相似 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR SS8050CTA 单晶体管 双极, NPN, 25 V, 100 MHz, 1 W, 1.5 A, 120 hFE
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review