Technical parameters/rated power: 0.6 W
Technical parameters/number of pins: 6
Technical parameters/dissipated power: 370 mW
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/minimum current amplification factor (hFE): 300 @500mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 300 @500mA, 5V
Technical parameters/rated power (Max): 600 mW
Technical parameters/DC current gain (hFE): 300
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 370 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOP-457
External dimensions/length: 3.1 mm
External dimensions/width: 1.7 mm
External dimensions/height: 1 mm
External dimensions/packaging: TSOP-457
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power management, industrial, consumer electronics products
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PBSS4140DPN
|
Philips | 类似代替 | SOT-457 |
NXP PBSS4140DPN 双极晶体管阵列, 通用, NPN, PNP, 40 V, 370 mW, -1 A, 300 hFE, SOT-457
|
||
|
|
Nexperia | 类似代替 | 6 |
NXP PBSS4140DPN 双极晶体管阵列, 通用, NPN, PNP, 40 V, 370 mW, -1 A, 300 hFE, SOT-457
|
||
PBSS4140DPN
|
NXP | 类似代替 | SOT-457 |
NXP PBSS4140DPN 双极晶体管阵列, 通用, NPN, PNP, 40 V, 370 mW, -1 A, 300 hFE, SOT-457
|
||
PBSS4140DPN,115
|
Nexperia | 类似代替 | TSOP-457 |
NXP PBSS4140DPN,115 双极晶体管阵列, NPN, PNP, 40 V, 370 mW, 1 A, 300 hFE, SOT-457
|
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