Technical parameters/frequency: 125 MHz
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 2.5 W
Technical parameters/breakdown voltage (collector emitter): 20 V
Technical parameters/maximum allowable collector current: 5A
Technical parameters/minimum current amplification factor (hFE): 250 @2A, 2V
Technical parameters/rated power (Max): 550 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 2500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-89-3
External dimensions/length: 4.6 mm
External dimensions/width: 2.6 mm
External dimensions/height: 1.6 mm
External dimensions/packaging: SOT-89-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PBSS4520X
|
NXP | 功能相似 | SOT-89 |
20V, 5A NPN low VCEsat (BISS) transistor
|
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