Technical parameters/frequency: 230 MHz
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 300 mW
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 2A
Technical parameters/minimum current amplification factor (hFE): 300 @1A, 2V
Technical parameters/Maximum current amplification factor (hFE): 350 @100mA, 2V
Technical parameters/rated power (Max): 480 mW
Technical parameters/DC current gain (hFE): 470
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 480 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SD2671TL
|
ROHM Semiconductor | 功能相似 | SOT-23-3 |
单晶体管 双极, NPN, 30 V, 280 MHz, 500 mW, 2 A, 270 hFE
|
||
PBSS4230T,215
|
NXP | 类似代替 | SOT-23-3 |
Nexperia PBSS4230T,215 , NPN 晶体管, 2 A, Vce=30 V, HFE:150, 230 MHz, 3引脚 SOT-23 (TO-236AB)封装
|
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