Technical parameters/frequency: 220 MHz
Technical parameters/polarity: NPN, PNP
Technical parameters/dissipated power: 420 mW
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 1A/0.9A
Technical parameters/minimum current amplification factor (hFE): 250
Technical parameters/Maximum current amplification factor (hFE): 250 @1mA, 5V
Technical parameters/rated power (Max): 420 mW
Technical parameters/DC current gain (hFE): 500
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 700 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SC-74-6
External dimensions/width: 1.7 mm
External dimensions/packaging: SC-74-6
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Automotive, Industrial, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
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Philips | 类似代替 |
NPN/PNP 晶体管，NXP 一系列 NXP BISS（小信号的重大突破）低饱和电压双 NPN/PNP 双极结点晶体管。 这些设备具有极低集电极-发射极饱和电压和高集电极电流容量，采用紧凑的空间节省型封装。 这些晶体管减少损失，可在用于切换和数字应用时减少热量的产生并整体提高效率。 ### 双极性晶体管，NXP Semiconductors
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