Technical parameters/forward voltage: 530mV @5A
Technical parameters/forward current: 10 A
Technical parameters/Maximum forward surge current (Ifsm): 200 A
Technical parameters/forward current (Max): 10 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-277
External dimensions/length: 6.15 mm
External dimensions/width: 4.35 mm
External dimensions/height: 1.2 mm
External dimensions/packaging: TO-277
Physical parameters/operating temperature: 55℃ ~ 150℃
Other/Product Lifecycle: Discontinued at Digi-Key
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SS10P4C-M3/86A
|
VISHAY | 完全替代 | TO-277 |
VISHAY SS10P4C-M3/86A 肖特基整流器, 双共阴极, 40 V, 10 A, TO-277A, 3 引脚, 530 mV
|
||
SS10P4C-M3/86A
|
Vishay Intertechnology | 完全替代 | TO-277 |
VISHAY SS10P4C-M3/86A 肖特基整流器, 双共阴极, 40 V, 10 A, TO-277A, 3 引脚, 530 mV
|
||
SS10P4C-M3/87A
|
Vishay Semiconductor | 类似代替 | TO-277 |
高电流密度表面贴装肖特基整流器 High Current Density Surface Mount Schottky Barrier Rectifiers
|
||
SS10P4C-M3/87A
|
VISHAY | 类似代替 | TO-277 |
高电流密度表面贴装肖特基整流器 High Current Density Surface Mount Schottky Barrier Rectifiers
|
||
SS10P4CHM3/86A
|
VISHAY | 完全替代 | TO-277 |
10A 至 15A,Vishay Semiconductor 肖特基整流器是半导体二极管,具有极低的正向电压降和非常快的切换作用。 肖特基二极管的反向恢复时间非常快。 肖特基二极管适用于需要快速切换和低功耗的应用。 ### 肖特基整流器,Vishay Semiconductor
|
||
SS10P4CHM3/86A
|
Vishay Semiconductor | 完全替代 | TO-277 |
10A 至 15A,Vishay Semiconductor 肖特基整流器是半导体二极管,具有极低的正向电压降和非常快的切换作用。 肖特基二极管的反向恢复时间非常快。 肖特基二极管适用于需要快速切换和低功耗的应用。 ### 肖特基整流器,Vishay Semiconductor
|
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