Technical parameters/dissipated power: 375W (Tc)
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Input capacitance (Ciss): 14606pF @20V(Vds)
Technical parameters/dissipated power (Max): 375W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SQM110N04-02L-GE3
|
Vishay Siliconix | 功能相似 | D2PAK |
MOSFET N-CH D-S 40V TO263
|
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