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Model SQJB60EP-T1_GE3
Description Dual Field Effect Transistor, MOSFET, Dual N-channel, 30 A, 60 V, 0.01 ohm, 10 V, 2 V
Product QR code
Brand: VISHAY
Packaging SO-8
Delivery time
Packaging method
Standard packaging quantity 1
3.09  yuan 3.09yuan
5+:
$ 4.1702
25+:
$ 3.8613
50+:
$ 3.6450
100+:
$ 3.5524
500+:
$ 3.4906
2500+:
$ 3.4133
5000+:
$ 3.3825
10000+:
$ 3.3361
Quantity
5+
25+
50+
100+
500+
Price
$4.1702
$3.8613
$3.6450
$3.5524
$3.4906
Price $ 4.1702 $ 3.8613 $ 3.6450 $ 3.5524 $ 3.4906
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3791) Minimum order quantity(5)
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Technical parameters/number of pins: 6

Technical parameters/drain source resistance: 0.01 Ω

Technical parameters/polarity: Dual N-Channel

Technical parameters/dissipated power: 48 W

Technical parameters/threshold voltage: 2 V

Technical parameters/drain source voltage (Vds): 60 V

Technical parameters/rise time: 3 ns

Technical parameters/Input capacitance (Ciss): 1228pF @25V(Vds)

Technical parameters/descent time: 25 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 48000 mW

Package parameters/number of pins: 8

Encapsulation parameters/Encapsulation: SO-8

External dimensions/packaging: SO-8

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Active

Compliant with standards/RoHS standards: RoHS Compliant

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