Technical parameters/dissipated power: 83W (Tc)
Technical parameters/Input capacitance (Ciss): 5950pF @20V(Vds)
Technical parameters/dissipated power (Max): 83W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Not Recommended
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SQJ412EP-T1-GE3
|
Vishay Siliconix | 功能相似 | PowerPAK SO |
MOSFET N-CH D-S 40V PPAK 8SOIC
|
||
SQJ412EP-T1-GE3
|
VISHAY | 功能相似 |
MOSFET N-CH D-S 40V PPAK 8SOIC
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review