Technical parameters/drain source resistance: 0.058 Ω
Technical parameters/dissipated power: 3 W
Technical parameters/threshold voltage: 1.5 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-236
External dimensions/packaging: TO-236
Physical parameters/operating temperature: -55℃ ~ 175℃
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SQ2319ES-T1-GE3
|
Vishay Semiconductor | 类似代替 | TO-236 |
MOSFET P-CH 40V 4.6A TO-236
|
||
|
|
VISHAY | 类似代替 | SOT-23-3 |
MOSFET P-CH 40V 4.6A TO-236
|
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