Technical parameters/rated voltage (DC): 75.0 V
Technical parameters/rated current: 80.0 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 300W (Tc)
Technical parameters/input capacitance: 6.13 nF
Technical parameters/gate charge: 180 nC
Technical parameters/drain source voltage (Vds): 75 V
Technical parameters/Continuous drain current (Ids): 80.0 A
Technical parameters/Input capacitance (Ciss): 6130pF @25V(Vds)
Technical parameters/rated power (Max): 300 W
Technical parameters/dissipated power (Max): 300W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP75NF75
|
ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 STripFET™ II,STMicroelectronics STripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管,STMicroelectronics
|
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