Technical parameters/rated voltage (DC): -60.0 V
Technical parameters/rated current: -9.70 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 400 mΩ
Technical parameters/polarity: P-CH
Technical parameters/dissipated power: 42 W
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/leakage source breakdown voltage: 60 V
Technical parameters/Continuous drain current (Ids): 9.70 A
Technical parameters/rise time: 168 ns
Technical parameters/Input capacitance (Ciss): 450pF @25V(Vds)
Technical parameters/descent time: 89 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 42W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/length: 6.73 mm
External dimensions/width: 2.38 mm
External dimensions/height: 6.22 mm
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RFD8P06LE
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Intersil | 功能相似 |
8A , 60V , 0.300欧姆,额定ESD ,逻辑电平,P沟道功率MOSFET 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET
|
|||
SPD09P06PL
|
Infineon | 功能相似 | TO-252-3 |
SIPMOS功率三极管 SIPMOS Power-Transistor
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SPD09P06PLG
|
Infineon | 功能相似 | TO-252-3 |
60V,-9.7A,P沟道功率MOSFET
|
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