Technical parameters/rated voltage (DC): 55.0 V
Technical parameters/rated current: 80.0 A
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 300W (Tc)
Technical parameters/input capacitance: 5.50 nF
Technical parameters/gate charge: 155 nC
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/Continuous drain current (Ids): 80.0 A
Technical parameters/Input capacitance (Ciss): 5500pF @25V(Vds)
Technical parameters/dissipated power (Max): 300W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3-1
External dimensions/packaging: TO-220-3-1
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP80NF55-06
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP80NF55-06 晶体管, MOSFET, N沟道, 80 A, 55 V, 6.5 mohm, 10 V, 3 V
|
||
STP80NF55-08
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP80NF55-08 晶体管, MOSFET, N沟道, 80 A, 55 V, 8 mohm, 10 V, 3 V
|
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