Technical parameters/rated voltage (DC): 560 V
Technical parameters/rated current: 16.0 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 160000 mW
Technical parameters/drain source voltage (Vds): 560 V
Technical parameters/Continuous drain current (Ids): 16.0 A
Technical parameters/rise time: 8 ns
Technical parameters/Input capacitance (Ciss): 1600pF @25V(Vds)
Technical parameters/rated power (Max): 160 W
Technical parameters/descent time: 8 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 160 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.36 mm
External dimensions/width: 4.57 mm
External dimensions/height: 15.95 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SPP11N80C3
|
Infineon | 类似代替 | TO-220-3 |
INFINEON SPP11N80C3 功率场效应管, MOSFET, N沟道, 11 A, 800 V, 0.39 ohm, 10 V, 3 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review