Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 10.3 A
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 50W (Tc)
Technical parameters/input capacitance: 426 pF
Technical parameters/gate charge: 19.4 nC
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 10.3 A
Technical parameters/rise time: 46 ns
Technical parameters/Input capacitance (Ciss): 426pF @25V(Vds)
Technical parameters/rated power (Max): 50 W
Technical parameters/descent time: 23 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 50W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3-1
External dimensions/packaging: TO-220-3-1
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP120NF10
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP120NF10 晶体管, MOSFET, N沟道, 110 A, 100 V, 0.009 ohm, 10 V, 4 V
|
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