Technical parameters/frequency: 140 MHz
Technical parameters/polarity: NPN, PNP
Technical parameters/dissipated power: 2.3 W
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 5.7A/4.8A
Technical parameters/minimum current amplification factor (hFE): 300
Technical parameters/rated power (Max): 2.3 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOT-96-1
External dimensions/height: 1.45 mm
External dimensions/packaging: SOT-96-1
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PBSS4032SPN
|
Nexperia | 功能相似 | SOT-96 |
NXP PBSS4032SPN 双极晶体管阵列, NPN, PNP, 30 V, 2.3 W, 5.7 A, 300 hFE, SOIC
|
||
PBSS4032SPN,115
|
Nexperia | 类似代替 | SOT-96-1 |
Nexperia PBSS4032SPN,115, 双 NPN + PNP 晶体管, 5.7 A, Vce=30 V, HFE:200 (PNP), 300 (NPN), 100 MHz, 8引脚
|
||
PBSS4032SPN,115
|
NXP | 类似代替 | SOT-96-1 |
Nexperia PBSS4032SPN,115, 双 NPN + PNP 晶体管, 5.7 A, Vce=30 V, HFE:200 (PNP), 300 (NPN), 100 MHz, 8引脚
|
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