Technical parameters/rated voltage (DC): 55.0 V
Technical parameters/rated current: 50.0 A
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 136W (Tc)
Technical parameters/input capacitance: 2.30 nF
Technical parameters/gate charge: 69.0 nC
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/Continuous drain current (Ids): 50.0 A
Technical parameters/Input capacitance (Ciss): 2300pF @25V(Vds)
Technical parameters/rated power (Max): 136 W
Technical parameters/dissipated power (Max): 136W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SPP11N80C3
|
Infineon | 功能相似 | TO-220-3 |
INFINEON SPP11N80C3 功率场效应管, MOSFET, N沟道, 11 A, 800 V, 0.39 ohm, 10 V, 3 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review