Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 11W (Tc)
Technical parameters/drain source voltage (Vds): 650 V
Technical parameters/Continuous drain current (Ids): 0.8A
Technical parameters/rise time: 25 ns
Technical parameters/Input capacitance (Ciss): 100pF @25V(Vds)
Technical parameters/rated power (Max): 11 W
Technical parameters/descent time: 30 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 11W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.5 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.3 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPD80R2K8CEATMA1
|
Infineon | 类似代替 | TO-252-3 |
晶体管, MOSFET, N沟道, 1.9 A, 800 V, 2.4 ohm, 10 V, 3 V
|
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