Technical parameters/rated voltage (DC): -60.0 V
Technical parameters/rated current: -80.0 A
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.021 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 340 W
Technical parameters/input capacitance: 5.03 nF
Technical parameters/gate charge: 173 nC
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 80.0 A
Technical parameters/rise time: 18 ns
Technical parameters/Input capacitance (Ciss): 5033pF @25V(Vds)
Technical parameters/rated power (Max): 340 W
Technical parameters/descent time: 30 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 340W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.31 mm
External dimensions/width: 9.45 mm
External dimensions/height: 4.57 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Onboard charger
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SPB80P06P
|
Infineon | 类似代替 | TO-263-3 |
SIPMOS功率三极管 SIPMOS Power-Transistor
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review