Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Input capacitance (Ciss): 1200pF @10V(Vds)
Technical parameters/rated power (Max): 2 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not For New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SH8J65TB1
|
ROHM Semiconductor | 完全替代 | SOIC-8 |
场效应管(MOSFET) SH8J65TB1 SOP-8
|
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