Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/minimum current amplification factor (hFE): 50 @100mA, 1V
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MPSA56
|
ON Semiconductor | 类似代替 | TO-226-3 |
Transistor: PNP; bipolar; 80V; 500mA; 625mW; TO92
|
||
|
|
Semtech Corporation | 类似代替 |
Transistor: PNP; bipolar; 80V; 500mA; 625mW; TO92
|
|||
MPSA56
|
Diodes | 类似代替 | TO-92-3 |
Transistor: PNP; bipolar; 80V; 500mA; 625mW; TO92
|
||
MPSA56
|
Fairchild | 类似代替 | TO-226-3 |
Transistor: PNP; bipolar; 80V; 500mA; 625mW; TO92
|
||
|
|
Freescale | 类似代替 |
Transistor: PNP; bipolar; 80V; 500mA; 625mW; TO92
|
|||
MPSA56
|
NTE Electronics | 类似代替 | TO-92 |
Transistor: PNP; bipolar; 80V; 500mA; 625mW; TO92
|
||
PSA-5
|
ROHM Semiconductor | 功能相似 | TO-92 |
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN
|
||
|
|
Hirose Electric | 功能相似 |
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN
|
|||
|
|
ROHM Semiconductor | 功能相似 | TO-92 |
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN
|
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